PRODUCTION DEVELOPMENT OF A SILICON PLANAR EPITAXIAL TRANSISTOR WITH A MAXIMUM OPERATING FAILURE RATE OF 0.001% PER 1000 HOURS AT A CONFIDENCE LEVEL OF 90% AT 25 C.

Abstract

Progress is reported on an important advancement under the ''Epitaxial Starting Material'' process. It is the ''Cause and Elimination of 'Phantom p' Layers''. Under ''Reliability Engineering'', the acceleration factor experiment and the allaluminum system devices are covered. (Author)

Document Details

Document Type
Technical Report
Publication Date
Apr 30, 1963
Accession Number
AD0422536

Entities

Organizations

  • Motorola Mobility

Tags

DTIC Thesaurus Topics

  • Elimination
  • Engineering
  • Materials
  • Production
  • Production Engineering
  • Production Management Methods
  • Productivity
  • Reliability
  • Reliability Engineering
  • Transistors

Readers

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  • Semiconductor Device Technology
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