RESEARCH AND DEVELOPMENT FOR SURFACE PROTECTION FOR SILICON DEVICES.

Abstract

Work during the reporting period was directed toward the electrical evaluation of passivating layers. Equipment for both AC and DC evaluation is discussed. Also, grown silicon dioxide films on germanium and gallium arsenide surfaces by a sputtering process are reported on. The sputtering process is described, and the apparatus is diagramed. (Author)

Document Details

Document Type
Technical Report
Publication Date
Mar 14, 1963
Accession Number
AD0422580

Entities

People

  • H. C. Evitts
  • H. W. Cooper
  • J. Labrie
  • M. A. Hall
  • S. S. Flaschen

Organizations

  • Motorola Mobility

Tags

Communities of Interest

  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Chemical Compounds
  • Dioxides
  • Elements
  • Gallium
  • Gallium Arsenides
  • Germanium
  • Group 13 Elements
  • Group 14 Elements
  • Metalloids
  • Metals
  • Post-Transition Metals
  • Silicon
  • Silicon Dioxide
  • Sputtering
  • Test And Evaluation

Readers

  • Electrochemical Engineering/ Fuel Cell Technologies
  • Solar Photovoltaics and Thermoelectric Devices.
  • Systems Analysis and Design

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene