ELECTRICAL IONIZATION PHENOMENON IN GOLD-DOPED SILICON,

Abstract

An electrical breakdown phenomenon in heavily gold-doped silicon has been observed. The samples prepared with the proper ohmic end contacts exhibit linear current-voltage relationships at low fields, followed by a slight saturation in current (only in some samples). Then at some critical electric field, a sharp increase in current density (more than one order of magnitude) occurs. Some of the samples also exhibit negative incremental resistance at high values of the current density. This phenomenon is readily seen at room temperature in n-type samples, and at dry-ice temperatures in p-type samples. (Author)

Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1963
Accession Number
AD0422697

Entities

People

  • V. G. K. Reddi

Organizations

  • Stanford University

Tags

DTIC Thesaurus Topics

  • Chemical Reactions
  • Current Density
  • Electric Fields
  • Electromagnetic Fields
  • Ionization
  • Resistance
  • Saturation

Fields of Study

  • Materials science

Readers

  • Materials Science
  • Semiconductor Device Technology