PRODUCTION ENGINEERING MEASURE ON SILICON ALLOY TRANSISTORS.
Abstract
Efforts continued on the improvement of production techniques to increase the reliability of silicon transistors. Further control of chip dimensions was achieved. The bulk material parameters of resitivity and dislocation density were studied. Metallographic analysis of alloying led to firing jig redesign. The effects of tin, dislocation density, and chip thickness on alloying were determined. An improved emitter whisker was introduced. High temperature solder was introduced with partial flux elimination. A new approach to more efficient etching was explored. Step-stress equipment is under construction. Formal failure mode analysis is initiated. Operation standards, drawings, and quality inspection procedures were issued and work on the inspection and quality control plan was initaiated. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 31, 1963
- Accession Number
- AD0422940
Entities
People
- R. W. Jones
Organizations
- RTX