SILICON PLANAR EPITAXIAL TRANSISTOR TYPE 2N2193. SILICON GROWN DIFFUSED TRANSISTOR TYPE 2N336.
Abstract
Reliability measurement, 2N2193 transistor; l. The most prevalent type of failure was the collector-to-emitter short, so far obtained exclusively on 1.6 watts. Moreover, subjection of the devices to a voltage plus temperature ''screen'' prior to 1.6 watts promotes rather than screens for this type of failure. 2. At the 0.8 and 1.2 watt power levels, a 200 C. + 45 Volt screen proved to be useful in weeding out undesirable devices. 3. 35kG Phase II mechanical screen revealed a lot-to-lot mechanical variability, which was made even more apparent on devices previously subjected to 280 C. + 45 Volts, the higher of the two screens used. 4. Centrifuge step-stress results clearly demonstrate the improvement achieved in the mechanical reliability of the device over the contract period. 5. Preliminary voltage plus temperature step-stress results also indicate that an improvement may have been achieved in the inversion layer problem. Experimentation and Evaluation of 2N336; The evaluation of units capped on the rotary cap welder was performed after 640 hours of lift test performance. Both the high temperature with back-bias voltage stress and the power life tests show superior performance of units fabricated with rotary cap welding over those units fabricated by the standard process. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 31, 1961
- Accession Number
- AD0423608
Entities
People
- A. Fox
- F. J. Potter
- T. E. Jacobs
Organizations
- General Electric