PEM FOR TRANSISTOR MANUFACTURING PROCESS IMPROVEMENT.
Abstract
Considerable storage and life test data have accumulated on standard production transistors. Failure rates are computed from these data to three sets of endpoints (initial, normal and degradation) and failure rate versus junction temperature curves are shown. Life test data on the units sampled from standard production is included in the report and shows that an acceleration curve having a slope equivalent to an activation energy of 19.6 Kcal/mole is realistic. The data also indicates that the objective of the contract can be met by the degradation endpoints. Preliminary data is reported for samples of transistors taken from the production line for processing as improved reliability transistors. The samples tested have satisfactorily passed the proposed military specifications for storage life, operating life, environmental test, and Group A inspection. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 31, 1963
- Accession Number
- AD0423881
Entities
People
- J. Sanders