INTEGRATED PRECISION TUNING SYSTEM.
Abstract
Data are presented on three investigations. Transistor noise figure Measurements on a number of silicon low noise high frequency devices are presented. The results of measurement of intermodulation distortion of an amplifier circuit are shown when the emitter current and unbypassed emitter resistor are varied. It is shown that an optimum bias can be selected when small values of emitter resistance are used, and that the bypassing of the emitter circuit plays an important role regarding the optimum bias point. It is stated that the data shown in valid regardless of transistor type or construction. Finally data regarding transistor mixer gain and distortion is presented. Again the results are found to be independent of transistor type, and optimum operating point is dependent not only on unbypassed emitter resistance, but also on the level of oscillator injection. Work on a breadboard model incorporating design improvements was begun. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 30, 1963
- Accession Number
- AD0424027
Entities
People
- G. J. Luhowy
Organizations
- General Dynamics