MATERIAL PROCESSING AND PHENOMENA INVESTIGATIONS FOR FUNCTIONAL ELECTRONIC BLOCKS.
Abstract
Geometry control of anodic oxide layers grown on n-type silicon web (31 ohm-cm) was achieved using back-surface illumination by means of an inverted microscope. The opto-electrochemical system for measuring surface recombination velocity in silicon as a function of oxide dopants was refined in several ways. Fabrication of well controlled high resistance diffused layers has progressed rapidly, and results to date indicate a high degree of reproducibility. The control of sheet resist ance is achieved by close control of the doping level in the oxide prior to diffusion. Mixtures of phosphate esters with sodium nitrite in tetrahydrofurfuryl. An n-p-n mesa transistor, examined some time ago, which exhibited considerable irregularity in the emitter-base junction, was reexamined by newer techniques to determine whether the irregularity was a surface effect or one ''in depth''. The results indicated that the junction defect was a bulk effect. Kodak Metal Etch Resist was investigated for both light exposures and for electron exposures, and the resulting data were compared. Studies of the resolution obtainable with exposures of Kodak Photoresist using the scanning electron beam were made which indicate a different exposure mechanism depending on the exposing electron energy. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 06, 1963
- Accession Number
- AD0424067
Entities
People
- S. J. Angello
Organizations
- Westinghouse Electric Corporation