OXIDE SEMICONDUCTOR MATERIALS AND DEVICE RESEARCH.
Abstract
A series of measurements was made of the electrical properties of rectifying diodes made from semiconducting ceramic rutile and from single crystals of rutile. The series resistance of the semiconducting substrate was calculated from pulse measurements and the capacitance of the rectifying barrier was determined. The dc current-voltage relations for the diodes were also measured. Using the relation proposed by Schottky, the density of uncompensated ionized donors in the semiconducting layer was calculated as a function of the distance from the boundary between the gold rectifying contact and the oxide barrier layer. Calculations of the thickness of the oxide barrier layer from the capacitance measurements were found to yield approximately the same results as the measurements made by observing the layer visually with a microscope. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 17, 1963
- Accession Number
- AD0424096
Entities
People
- B. R. Gossick
- F. L. English
- H. B. Whitehurst
- J. J. Morrison
- L. H. Stubbe
Organizations
- Arizona State University