DEVELOPMENT OF A LOW-NOISE MILLIMETER-WAVE PARAMETRIC AMPLIFIER.
Abstract
Detailed theoretical analysis shows the required amplifier gain-bandwidth product and noise temperature can be obtained with a diode having a figure of merit of 100 Gc, provided (1) the idler frequency is below the signal frequency and (2) the diode is cooled to liquid helium temperture. Epitaxial gallium-arsenide varactor diodes with a figure of merit in excess of 100 Gc have been developed that can be operated without appreciable change in important characteristics from room temperature down to 4 K. The configuration of these diodes is not optimum for use in 90-Gc waveguide, and the diode junction probably will have to be mounted directly in the waveguide. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 1963
- Accession Number
- AD0424114
Entities
People
- J. Kliphuis
Organizations
- Control Data Corporation