RESEARCH AND DEVELOPMENT TO OBTAIN SEMICONDUCTOR DIODES FOR ELECTRONIC TUNING.
Abstract
Semiconductor devices for electronic tuning are to be made by planar epitaxial silicon technology, with diffusion of a heavily-doped p-type region into an n-type layer on an n+ substrate. A detailed comparison of the objective electrical specification of the required devices with those of existing specification of the required devices with those of existing state-of-the-art devices indicated that the principal obstacle to meeting the specifications by present-day planar technology is the limited breakdown voltage now observed with large-area planar diodes. The reasons for this limitation have been considered in terms of physical and metallurgical phenomena occurring during the processing sequence used, and a two-fold approach, involving both structural and processing changes, has been outlined. A detailed design analysis has indicated that minor modifications in the geometry of existing units would be expected to provide a structure with the desired inherent properties in the absence of surface problems. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 26, 1963
- Accession Number
- AD0424151