RESEARCH INVESTIGATION OF P-I-N ELECTRON JUNCTION DETECTORS.
Abstract
Thick sources containing both thallium-204 and phosphorus-32 have been utilized in carefully specified geometries for the purpose of comparing the response of silicon lithium-drifted p-i-n junction detectors to beta-ray sources with extrapolation chamber measurements of the surface absorbed dose rate. Dose rate measurements have been made with both spectra using sources having areas of 1.04 square cm, 10.0 square cm, and 100 square cm. Open-circuit voltage measurements have been completed for all these source configuration using a number of thin-window p-i-n junction detectors. Comparison of results for the two beta-ray spectra shows a slight energy dependence in the correlation between the induced junction potential of the detectors and the surface absorbed dose rate, the softer thallium204 spectrum giving a closer correlation than that of the phosphorus-32. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 11, 1963
- Accession Number
- AD0424169
Entities
Organizations
- HRL Laboratories