SHOCK PRODUCED PLASMA RESPONSE TO MICROWAVE RADIATION,
Abstract
At elevated microwave power levels incident on a shoc front, the deposition of rf energy causes non-equilibrium ionization enhancement in the vicinity of (rf) critical electron density located in the thermally ionizing region near the shock front. Subsequently this ionization ''shield'' grows toward the shock front while its peak electron density increases to several times the critical density. As this happens, the microwave reflection coefficient of the plasma increases, shielding the main body of plasma from the microwave field. This rf-induced plasma shield continues to grow in electron density as that section of plasma is swept back from the shock front away from the microwave interaction region or if the rf power is turned off. If the rf power is great enough, the above microwave-induced plasma shield appears to break away from the shock front and rapidly propagate on ahead towards the rf source at several times the shock velocity. This microwave-induced ''separated shield'' plasma runs ahead of the shock front only above some critical rf power density, which is well below the unshocked gas breakdown power level and which appears to be primarily dependent on the unshocked gas and gas pressure, and less dependent on the shock conditions. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 1963
- Accession Number
- AD0424404
Entities
People
- A. D. Ruess
- G. W. Bethke
Organizations
- General Electric