ADVANCED FUNCTIONAL ELECTRONIC BLOCK DEVELOPMENT.
Abstract
Continued effort on device technology and physics of electroluminescent GaAs and BP is described. Work of fabrication of el diodes was concerned with the perfection of the GaAs windows and junction technology of BP diodes. The el efficiency of various GaAs structures was investigated and significant enhancement was attained through device redesign. Further improvements are anticipated. Continued effort on photosensors is described. Information on fabrication reproducibility of npn silicon phototransistors was obtained. The exploratory work on shifting the photo response of photoconductors to match the spectral emisivity of GaAs el diodes has continued. Work on optoelectronic pairs using GaAs el diodes and silicon phototransistors is discussed. It has progressed to a point where some meaningful characteristics of the pairs were obtained. Material systhesis and crystal growth effort is described. This includes GaAs epitaxial growth by vapor transport using iodine, as well as a combination of AsC13 and H2. A thermo-chemical study of GaAs transport has been undertaken. Single crystal growth of BP was investigated by growth from nickel melt, as well as by vapor transport. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 31, 1963
- Accession Number
- AD0424420