PULSING AND CROSSTALK STUDIES IN SEMICONDUCTOR CIRCUITS.
Abstract
Pulse Power Study: A study is underway to determine the factors necessary to characterize the optimum performance of silicon planar transistors for use as power amplifiers in RF pulse type applications. A leterature search has been made with results included herein. The specification of the satisfactory operating region of the transistor has been studied. In particular, the junction temperature limitation of a transistor operating high power levels has been investigated. Some thermal characteristics of the devices under consideration have been evaluated. Detailed voltage limitation characterization is presented. Crosstalk Study: Distortion measurements were taken on a 2N700A transistor to determine the effect of input impedance, load resistance, emitter current, collector voltage, and signal amplitude on harmonic distortion. A mathematical model was developed that predicts fairly closely the amplitudes of the fundamental and the first three distrotion harmonics. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 14, 1963
- Accession Number
- AD0424458
Entities
People
- G. Burton Harrold
- Gerald Clafin
Organizations
- General Electric