ACTIVE THIN FILM TECHNIQUES MICROMIN PROGRAM.
Abstract
The purpose of this investigation is to develop a process for depositing device-quality silicon and/or germanium films on polycrystalline insulating substrates by vacuum evaporation of silicon and/or germanium and to form thin film diodes and transistors in these films. It was found that germanium deposited at a lower rate than silicon when using the same electron beam power and the same source holder. A carbon source holder was used to increase the deposition rate of germanium. Orientation of the germanium films was studied by X-ray and electron and (331) diffraction. They showed preferred orientation (100) or (311) and (331) depending on the substrate temperature. To obtain p-type silicon films in tge range 0.5 to 1.0 ohm-cm an improved technique for aluminum doping was developed, involving weighed charge in combination with time-current control. Diodes of much higher reverse breakdown (up to 116 volts) have been obtained with probe contacts, as a result of better resistivity control. Techniques have been applied for depositing high value resistors to be used in OR gates. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 25, 1963
- Accession Number
- AD0424707
Entities
People
- Egons Rasmanis
- James Cline
Organizations
- Sylvania Electric Products