FAILURE MECHANISMS IN SILICON SEMICONDUCTORS.

Abstract

Presented are investigations of two failure mechanisms: (1) second breakdown in silicon power transistors, and (2) studies of electrical charge on oxides protecting reverse biased silicon p-n junctions. The relationship between hot spots and second breakdown is investigated. Many transistors exhibit second breakdown in a region where there was local heating already at power levels insufficient for second breakdown. Other transistors, however, show no such correlation; second breakdown occurs at spots which initially showed no heating. This second breakdown seems to be initiated through some defect which is, as yet, unknown. The surface studies verified the Atalla-model of charge separation on oxides covering reverse biased junctions. Surface potential measurements indicate that voltages as high as 50% of the applied bias remain across the oxide immediately after bias removal. The buildup and decay of these voltages depends strongly upon surface treatment. (Author)

Document Details

Document Type
Technical Report
Publication Date
Nov 01, 1963
Accession Number
AD0425472

Entities

People

  • H. Queisser
  • R. Scarlett
  • W. Hooper
  • W. Schroen

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Coverings
  • Electronics
  • Extrinsic Semiconductors
  • Failure Mode And Effect Analysis
  • Hot Spots
  • Measurement
  • P-N Junctions
  • Power Levels
  • Semiconductor Devices
  • Semiconductors
  • Solid State Electronics
  • Surface Finishing
  • Transistors

Fields of Study

  • Physics

Readers

  • Integrated Circuit Design and Technology.
  • Plasma Physics.

Technology Areas

  • Microelectronics