COMPATIBLE ACTIVE THIN-FILM INTEGRATED STRUCTURES.
Abstract
A literature survey is given covering work in the fields of theory of silicon growth, growth of silicon from the vapor phase, evaporation, and thin-film silicon devices. This report is concerned essentially with the first steps in the development of a thin-film integrated circuit, namely the development of the semiconductor substrate and the active device. Two methods of forming the substrate are being investigated: evaporation and pyrolysis. The evaporation technique is of interest because it is readily integrated with other production methods. After studying several methods of evaporating, direct electron-beam bombardment of silicon was adopted. Preliminary tests were made on polished quartz substrates. Best results were achieved at temperatures of 1100 C for which mobilities of 1 to 5 cm/volt-sec were measured. A flow system for the pyrolysis of silane was set up along with the desirable doping supplies and tested by growing epitaxially on silicon. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 15, 1963
- Accession Number
- AD0425795
Entities
People
- C. W. Mueller
Organizations
- RCA Corporation