HIGH POWER SEMICONDUCTOR PHASE SHIFTING DEVICES.

Abstract

Efforts were continued on the development of high power semiconcuctor phase shifting devices. The uses of transmission phase shifters using diodes as active control elements are discussed, and the description and characteristics of this circuit configuration are noted in general terms. Progress made within the last study interval is reported. This includes the construction of an 8-section 1300 mc phase shifter operated to peak power levels of 140 KW and a 3000 mc, 8-section phase shifter yielding up to 15 KW peak power capability and 0 degrees to 180 degrees phase shift in 22 1/2 degree steps and 0.9 db total insertion loss. (Author)

Document Details

Document Type
Technical Report
Publication Date
Nov 01, 1963
Accession Number
AD0425960

Entities

People

  • Joseph F. White

Organizations

  • M/A-COM Technology Solutions

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Construction
  • Electronics
  • Insertion Loss
  • Intervals
  • Losses
  • Peak Power
  • Phase Shift
  • Power
  • Power Levels
  • Semiconductors
  • Solid State Electronics

Fields of Study

  • Physics

Readers

  • Microwave Engineering.

Technology Areas

  • Microelectronics