INVESTIGATION AND DEVELOPMENT IN THE AREA OF EPITAXIAL GROWTH TECHNIQUES.
Abstract
Continuous improvement in substrate surface preparation has been achieved. A study of temperature and deposition rate effects on epitaxial layer doping in SiCl4-AsCl3 and SiCl3 and SiCl4-B2H6 systems was conducted. Work on oxide masked epitaxial growth in selected areas has been resumed. An infrared transmission technique was set up to detect microcracks in silicon substrates and epitaxial wafers. Facility to determine epitaxial layer resistivity by ac, dc and dc-pulse three point probe measurements was set up. Capacitance measurement of shallow diffused junctions is being studied as means to determine doping gradient profile in P-type layers. Study of epitaxial layer crystalline perfection by X-ray techniques has been continued. High-voltage, large-area epitaxial planar junctions are in preparation, and are to be used as vehicles for evaluation of epitaxial layer quality. Development of epitaxial technology applicable to microelectronic integrated circuits is continuing. Vapor growth of silicon thin film on foreign, non-silicon substrates is being studied. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 31, 1963
- Accession Number
- AD0426018
Entities
People
- I. Feinberg
- Pingshan Wang
- R. Berkstresser
- V. Sils
Organizations
- Sylvania Electric Products