MICROWAVE DIODE RESEARCH.
Abstract
Esaki diodes have shown considerable promise as moderately low-noise microwave amplifiers. The usual amplifier specifications of noise figure, gain bandwidth, dynamic range, linearity, stability, and impedance level place strict limitations on the characteristics of the diodes employed and on the diode package as well. Gallium-antimonide Esaki diodes have been fabricated and packaged in a special low-inductance mount for microwave amplification in strip transmission line. This package has a series inductance of less than 0.5 nanohenry when it is mounted in a 50-ohm line. Resistive cutoff frequencies of 18 gc, which are deemed adequate for X-band operation, have been attained with GaSb. Additional epitaxial GaAs varactors of both the diffused and the surface barrier varieties have been fabricated. Measurements of the 5.85-gc dynamic quality factors of these units yield median values of 11.5 for the diffused and 14.5 for the surface barrier diodes. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 10, 1963
- Accession Number
- AD0426048
Entities
People
- C. E. Golightly
- J. C. Irvin
- P. J. Fillingham