NON-OHMIC TRANSPORT IN SEMICONDUCTORS IN A MAGNETIC FIELD,

Abstract

Schokey's hot electron picture for semiconductors in high electron fields is extended to include arbitrary (though 'non-quantizing') mangetic fields. The effects are then more diversified and offer wider experimental possibilities. While preserving the orginal simplicity of Shockley's model, its scope can be extended by including a reduction of th power input due to the deflection caused by the Lorentz force. Explicit calculations are carried out for an idealized isotropic model which Conwell used to interpret the experimental data for n-Ge in zero magnetic field. This involves interaactions of electrons with acoustic and covalent optical modes. This model calculation is designed to illustrate the main physical features of the extended Shockley picture. The results obtained are used to discuss the kind of information which can be expected from different types of experiments and some suggestions are made for some relevant measurements yet to be done. Other scattering mechanisms are briefly discussed. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1963
Accession Number
AD0426191

Entities

People

  • D. Matz
  • F. Garcia-moliner

Organizations

  • University of Illinois Urbana–Champaign

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Crystal Lattice Vibrations
  • Deflection
  • Electronics
  • Electrons
  • Experimental Data
  • Lorentz Force
  • Magnetic Fields
  • Measurement
  • Scattering
  • Semiconductors
  • Solid State Electronics
  • Transport Ships

Fields of Study

  • Physics

Readers

  • Plasma Physics / Magnetohydrodynamics
  • Semiconductor Device Technology
  • Theoretical Analysis.

Technology Areas

  • Microelectronics