SEMICONDUCTOR DEVICE CONCEPTS.

Abstract

Halogen vapor transport synthesis of Ga(As1-xPx) and its preparation into laser junctions are described. Electrical and optical properties of Ga(As1-xPx) laser junctions are discussed. The present limitations in these properties are related to material problems and the very early state of development of Ga(As-xPx), , and are discussed. Inhomogeneity problems, Fluctuation of As:P ratio, and problems with deep level contaminants are described and related to Ga(As1-xPx) junction performance. Laser junctions are demonstrated which operate to wavelengths as short as 6470A (77 K). The prospect that Ga(As1-xPx) will operate to wavelengths perhaps 100A shorter is mentioned. (Author)

Document Details

Document Type
Technical Report
Publication Date
Oct 31, 1963
Accession Number
AD0426254

Entities

Organizations

  • General Electric

Tags

DTIC Thesaurus Topics

  • Advanced Materials
  • Compound Semiconductors
  • Electronics
  • Engineered Materials
  • Environmental Pollutants
  • Materials
  • Optical Properties
  • Plasmonic Materials
  • Semiconductor Devices
  • Semiconductors
  • Solid State Electronics
  • Transport Ships

Readers

  • Approximation Theory.
  • Optical Physics and Photonics.
  • Superconducting Magnet Technology

Technology Areas

  • Directed Energy
  • Directed Energy - Lasers
  • Microelectronics
  • Microelectronics - Graphene