SEMICONDUCTOR DEVICE CONCEPTS.

Abstract

The self-diffusion of Cd in Cds has been measured under a variety of doping and firing conditions. Under saturated Cd pressure the diffusion coefficient is given by D = 3 exp(-2.0 eV/kT). Under S pressure at 800 C the diffusion coefficient is found to be linearly dependent on the donor impurity concentration. By measuring the position of the peak of the edge emission exciton band it has been possible to monitor accurately the temperature of operating Cu2SeZnSe injection electroluminescent heterojunctions. Luminescence from traveling solvent SiC diodes is discussed. Mixed crystals of GaAs-GaP were grown from excess Ga. Coherent light emission was obtained from diodes made from these crystals. Luminescence from GaSb diodes shows line narrowing, but coherent light emission was not achieved. (Author)

Document Details

Document Type
Technical Report
Publication Date
Oct 31, 1963
Accession Number
AD0426258

Entities

Organizations

  • General Electric

Tags

DTIC Thesaurus Topics

  • Carbides
  • Chemical Compounds
  • Coefficients
  • Compound Semiconductors
  • Diffusion
  • Diffusion Coefficient
  • Electronics
  • Emission
  • Heterojunctions
  • Impurities
  • Inorganic Carbon Compounds
  • Inorganic Chemicals
  • Luminescence
  • Semiconductor Devices
  • Semiconductors
  • Silicon Carbide

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics