FIELD EFFECT AND SPACE-CHARGE-LIMITED THIN FILM TRIODES.

Abstract

Work was performed on thin film structures for space-charge-limited current devices and on thin film unipolar field effect transistors of cadmium sulfide. The results of experiments to study devices in structures in which space-chargelimited current mechanisms are employed are reported. No space-charge-limited triode operation was observed. The relative roles of field effect and space charge limitation are not unequivocally separated in this structure. An analysis is presented comparing the properties of field effect and space-charge-limited devices. It is shown that the space-charge-limited triode has no significant advantages over the insulated gate, field effect, thin film triode in all structures except that of the transversely orientec extremely thin film structure. For the more immediate future the field effect device appears to be the more suitable type upon which effort should be expended. (Author)

Document Details

Document Type
Technical Report
Publication Date
Oct 30, 1963
Accession Number
AD0426309

Entities

People

  • A. Waxman
  • F. V. Shallcross
  • J. J. Bowe
  • P. K. Weimer
  • W. H. Laznovsky

Organizations

  • RTX

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Field Effect Transistors
  • Films
  • Semiconductor Devices
  • Semiconductors
  • Space Charge
  • Thin Films
  • Transistors

Readers

  • Plasma Physics.
  • Solar Photovoltaics and Thermoelectric Devices.
  • Structural Dynamics.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Space
  • Space - Hall-Effect Thruster