STUDY OF COMPREHENSIVE FAILURE MECHANISM THEORY.

Abstract

Behavior of deposited film resistors has been studied. Results to date indicate oxidation and precipitation of the resistive film to be the principal mechanisms responsible for changes in resistance under temperature stress and with time. Mathematical models for resistor behavior based upon oxidation processes and othean isms have been programmed for the IBM 7090 computer. A technique is described for extending these essentially deterministic models into their probabilistic counterparts. The most likely sources of variation which would give rise to variations in times to failure are discussed. (Author)

Document Details

Document Type
Technical Report
Publication Date
Aug 01, 1963
Accession Number
AD0426733

Entities

People

  • A. Horbert
  • D.w. Levinson
  • M.e. Goldberg
  • R.g. Stewart

Organizations

  • IIT Research Institute

Tags

DTIC Thesaurus Topics

  • Computers
  • Corrosion Resistance
  • Electrical Impedance
  • Electrical Properties
  • Electrical Resistance
  • Electricity
  • Failure Mode And Effect Analysis
  • Film Resistors
  • Impedance
  • Mathematical Models
  • Models
  • Oxidation
  • Precipitation
  • Resistance
  • Resistors

Readers

  • Computational Modeling and Simulation
  • Electrical Engineering
  • Materials Science and Engineering.