PHOTOELECTRIC MILLIMETER WAVE DETECTOR,
Abstract
This program is concerned with the application of semiconducting materials to the problem of detection of electromagnetic radiation in the millimeter and submillimeter wavelength range. The method of approach involves the use of the internal photoelectric effect (i.e., photoconductivity) in certain semiconductor materials at very low temperatures. The program can be broken down into four main phases. a) investigation of indium antimonide in a magnetic field, b) investigation of gallium arsenide and/or indium arsenide in a magnetic field, c) investigation of germanium and its behavior under stress, and d) fabrication of experimental and breadboard model detectors. Investigations on indium antimonide in a magnetic field are continuing. Samples of gallium arsenide have been acquired and measurements on this material are beginning. A paper summarizing the ''state of the art'' in photoconductive detectors for the millimeter and submillimeter wave region was prepared and presented at the 19th Annual National Electronics Conference. The paper is reproduced as an appendix to this report. A theoretical analysis has been performed to establish the limits of sensitivity of the various types of long wave-length photoconductive detectors which have been developed and the performance of actual detectors is compared with the theoretical limit.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1963
- Accession Number
- AD0427092
Entities
People
- G. F. Giggey
- P. R. Bratt
Organizations
- RTX