STUDY OF SURFACE STATES IN SEMICONDUCTORS,

Abstract

Research concerns a study of surface states in semiconductors. Apparatus for the pulsed field effect was assembled and tested by reproducing previous experiments on silicon and germanium surfaces. Measurements on n-type silicon indicate surface states with cross-sections of 10 to the -12th power sq cm 0.73 e.V. below the conduction band, near those previously reported at 0.62 e.V. The pulsed field effect experiment on germanium surfaces, however, revealed slow surface states whose decay times increased as adsorbed gases were removed. (Author)

Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1963
Accession Number
AD0427117

Entities

People

  • G. Rupprecht

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Structures
  • Carbides
  • Chemical Compounds
  • Compound Semiconductors
  • Conduction Bands
  • Electronics
  • Energy Bands
  • Germanium
  • Inorganic Carbon Compounds
  • Inorganic Chemicals
  • Measurement
  • Semiconductors
  • Silicon Carbide
  • Solid State Electronics

Fields of Study

  • Physics

Readers

  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.
  • Solar Photovoltaics and Thermoelectric Devices.
  • Thermal Physics or Thermal Science.

Technology Areas

  • Microelectronics