RESEARCH IN ELECTRON EMISSION FROM SEMICONDUCTORS.
Abstract
Research was continued on electron emission from semiconductors. Emphasis was placed on the following aspects: (1) Basic investigation of hot electron emission, with the voltage applied across a semiconductor p-n junction varying over a wide range; (2) Production of low electron affinity surfaces by suitable activation processes with alkali metals; (3) Development and study of large area p-n junction hot electron emitters with injecting contacts; and (4) Investigation of negative electron affinity materials for electron emission. Several n-p-n electron emitters were produced. Measurements on one indicated that without cleaning the surface, a full cesium monolayer will not remain on the surface so that good measurements could not be made. An attempt to remove silicon oxide from a silicon crystal by reaction with cesium was made but the results were not definitive. Measurements of the photoemission and reflectance of GaP with Cs for use as a negative electron affinity material were improved. Measurements of the hole concentration in the samples used and calculations of the band bending indicate that the material was not heavily enough doped to see the effect. Samples of GaP were doped by diffusion so that the negative electron affinity effect should be observable. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 12, 1963
- Accession Number
- AD0427139
Entities
People
- C. R. Fuselier
- R. E. Simon
Organizations
- Sarnoff Corporation