P-N JUNCTION FORMATION TECHNIQUES.
Abstract
Investigations were continued on spectral response as a function of junction depth in p-onn-type cells. A further ''blue'' shift was ob served with lower implantation energy (100 Kev), the equal photon relative response curve peaking at 6000 angstroms. Graphically determined values of minority carrier diffusion lengths in the surface region show a trend towards values equalling junction depth for low-energy implanted cells. Base diffusion lengths indicate a need for better starting material to obtain more efficient cells. An empirical curve was obtained giving relative efficiencies under solar and W light as a function of implantation energy. P-type cells were implanted with P ions to make n-on-p cells. First cells produced in this manner had efficiencies greater than 5% and spectral responses similar to comparable p-on-n cells. Preliminary radiation damage studies on IPC and commercial cells are reported. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 1963
- Accession Number
- AD0427178