500 C SILICON CARBIDE RECTIFIER PROGRAM.
Abstract
Efforts were continued on the development of methods for quality-quantity production of SiC rectifiers. A larger diameter sublimation furnace was designed and fabrication will begin shortly. With a larger growth cavity and therefore a greater surface area available for crystal growth, the number of usable crystals per run should increase. Epitaxial layers of containing a p-n junction were prepared and evaluation is in progress. The design of the equipment needed for quantity production of SiC rectifiers is nearly complete. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 31, 1963
- Accession Number
- AD0427196
Entities
People
- D. R. Thornburg
- Hsing-Yin Chang
- J. Ostroski
- L. J. Kroko
- V. J. Jennings
Organizations
- Westinghouse Electric Corporation