EVAPORATED THIN-FILM DEVICES.
Abstract
Research concerned thin-film devices which had evaporated. The operating characteristics of the insulated-gate thin-film transistor (TFT) are shown in good agreement with a simple field-effect analysis. A coplanar-electrode TFT structure has yielded improved performance and is simpler to fabricate than the earlier staggeredelectrode structure. A p-type TFT, having excellent enhancement-type characteristics, was made using evaporated tellurium as the semiconductor. Studies of mobility in the space-charge layer using the TFT as a research tool have shown the existence of barriers between crystallites in a polycrystalline cadmium sulfide film. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 31, 1963
- Accession Number
- AD0427362
Entities
People
- A. Waxman
- F. V. Shallcross
- H. Borkan
- P. K. Weimer
- V. E. Henrich
Organizations
- Sarnoff Corporation