TELLURIUM CRYSTAL GROWTH

Abstract

Techniques employed for the preparation of single crystal tellurium by the slow-cooling, vapor, Bridgman, and Czochralski methods are described. The Czochralski method had provided large (17 mm diameter by 70 mm long) single crystal boules, and lends itself to the addition of dopants during crystal growth. The ready cleavage parallel to the c axis evidenced by tellurium crystals requires the use of special techniques for fabrication of samples for optical and electrical evaluation.

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Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1963
Accession Number
AD0428016

Entities

People

  • R. C. Keezer

Organizations

  • University of Michigan

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms
  • Cyber

DTIC Thesaurus Topics

  • Amorphous Materials
  • Chemistry
  • Crystal Growth
  • Crystal Lattices
  • Crystal Structure
  • Crystallography
  • Crystals
  • Detectors
  • Flow Rate
  • Gas Flow
  • Heat Energy
  • Latent Heat
  • Materials
  • Melting Point
  • Single Crystals
  • Temperature Gradients
  • Thermal Conductivity

Fields of Study

  • Materials science

Readers

  • Computational Modeling and Simulation
  • Materials Science and Engineering.