PRODUCTION ENGINEERING MEASURE ON SILICON ALLOY TRANSISTORS.
Abstract
Centering of the silicon resistivity specification is described with parameter distributions. Introduction of X-ray orientation, I. D. slicing and variably indexed scribing is discussed. A modified rinsing tank with electrolytic monitoring was introduced into production. The feasibility of the use of a thermographic phosphor to monitor burn-in racks was demonstrated as a reliable production technique. Power step-stress was used to monitor the improvement of production product. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 30, 1963
- Accession Number
- AD0428089
Entities
People
- A. W. Postlethwaite
- L. F. Leary
- R. W. Jones
Organizations
- RTX