ADVANCED FUNCTIONAL ELECTRONIC BLOCK DEVELOPMENT.
Abstract
Research was continued on a program to improve and exploit semiconductor optoelectronic phenom ena effect for potential use in functional electronic blocks. Detailed studies of the capacitance and of the V-I characteristics and emission bands as a function of temperature were made for zincdiffused GaAs diodes. The degree of reproducibility of our el diode fabrication procedure was established, and various materials for diffusion substrates were evaluated. The formation of ohmic contacts to the diodes was improved. GaAs el diodes were fabricated by depositing epitaxial n-type material on p-type substrates. The optical and electrical properties at 77K and 300K are reported. Limited work was done on diodes formed by zinc diffusion into n-type epitaxial layers. Si phototransistors for use in optic amplifiers were studied. The present method for assembling the optic amplifier consisting of a GaAs el diode and a Si phototransistor is described. Coupling problems are discussed.
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 30, 1963
- Accession Number
- AD0428185