INVESTIGATION OF ZINC BLENDE TYPE SEMICONDUCTORS,
Abstract
The accomplishments are presented under three broad categories, namely: I. Research concerned with InSb, which involves transport effects, high pressure phase transitions, and studies of the kinetics of crystal growth and related phenomena; II. Studies of impurity behavior in GaSb, which have shed light on the nature of the residual acceptors present in material prepared under conditions conducive to achievement of highest purity; and III. Transport studies in GaSb, which have revealed the importance of impurity states associated with subsidiary conduction band minima. Implications of the findings in these areas are discussed, and suggestions for further work are given in certain instances. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 25, 1963
- Accession Number
- AD0428335
Entities
People
- A. C. Beer
Organizations
- Battelle Memorial Institute