CHEMICAL FORMATION OF MICROCIRCUIT ELEMENTS.

Abstract

A sputtering technique for the preparation of dielectric films of titanium oxide is described. Uniformity, reproducibility, and stability during the period of test were established. Capacitance values are about 0.4 microfarads/sq. cm. Frequency dependence and temperature coefficient of capacitance and dissipation are given. Curves showing long term stability of resistive films are included. The feasibility of using this technique for developing titanium resistors and capacitors is demonstrated. (Author)

Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1963
Accession Number
AD0428590

Entities

People

  • C. A. Wysocki
  • J. M. Mitchell
  • T. K. Lakshmanan

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Capacitance
  • Capacitors
  • Coefficients
  • Dielectric Films
  • Dissipation
  • Elements
  • Films
  • Frequency
  • Microcircuits
  • Oxides
  • Reproducibility
  • Resistors
  • Sputtering
  • Temperature Coefficients
  • Titanium
  • Titanium Oxides

Readers

  • Electrical Engineering
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene