INVESTIGATION OF TRANSIENT RADIATION DAMAGE IN SEMICONDUCTOR MATERIALS.

Abstract

The efect of X-ray flashes (produced by the Linac) on small silicon samples was examined. The amplifier and associated shielded cables performed as expected. Coincident with the X-ray flash, the electrical conductance of the silicon sample increased suddenly and then returned to its normal value with a relaxation time of about five microseconds. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jul 31, 1963
Accession Number
AD0428994

Entities

People

  • Roland M. Lichtenstein

Organizations

  • Rensselaer Polytechnic Institute

Tags

DTIC Thesaurus Topics

  • Absorbers (Materials)
  • Advanced Materials
  • Amplifiers
  • Compound Semiconductors
  • Electromagnetic Radiation
  • Electronics
  • Engineered Materials
  • Flashes
  • Ionizing Radiation
  • Materials
  • Metamaterial Absorbers
  • Radiation
  • Relaxation Time
  • Semiconductors
  • X Ray Flash
  • X Rays

Fields of Study

  • Physics

Readers

  • Materials Science (Mechanical Engineering).
  • Materials Science and Engineering.
  • Pulsed Power and Plasma Physics.

Technology Areas

  • Microelectronics