500 WATT SILICON POWER TRANSISTOR.

Abstract

A method of testing power transistors for secondary breakdown behavior is described. Test results obtained on transistors manufactured by several different processes are discussed. It was found that secondary breakdown occurs in the collectorbase connection as well as in the collectoremitter mode. Test results are analyzed in terms of junction breakdown, avalanche-limited and punch-through limited transistor breakdown, and thermal runaway. Approaches to design of the subject transistor are evolved from consideration of test results. (Author)

Document Details

Document Type
Technical Report
Publication Date
Oct 30, 1963
Accession Number
AD0429319

Entities

Organizations

  • Westinghouse Electric Corporation

Tags

Communities of Interest

  • Advanced Electronics
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Active Electronic Components
  • Electronic Components
  • Electronic Equipment
  • Electronics
  • Transistors

Fields of Study

  • Engineering
  • Physics

Readers

  • Electronics Engineering
  • Semiconductor Device Technology