SEMICONDUCTOR MATERIALS.
Abstract
It is shown that injection electroluminescence in semiconductor diodes is better suited for a solid-state panel display that the ac electroluminescence in ZnS-type powders. The optoelectric criteria of a semiconductor type electroluminescent display matrix and the neces sary material selection satisfy them are discussed. The progress on materials and device technology using cubic boron phosphide and GaAs-GaP alloy el diodes is reported. Results of measurements of optical absorption and electroluminescence in BP are described. The range of possible injection el colors is investigated. A solution to the problem of matrix switching and storage is discussed. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 26, 1963
- Accession Number
- AD0429789