PREPARATION OF SUBSTRATE FOR EPITAXIAL GROWTH. VOLUME II. SECTION III. TASK 2.

Abstract

Research concerned the establishment of a pro duction engineering measure for improvement of production techniques for the 2N914 and 2N995 silicon planar epitaxial transistors. This volume presents results of the preparation of substrate for epitaxial growth, header plating particle elimination and aluminum deposition phases of the program. Final operating specifications and production data are presented along with a summary of the work performed. (Vol. I is AD429 420). (Author)

Document Details

Document Type
Technical Report
Publication Date
Oct 31, 1963
Accession Number
AD0429921

Tags

DTIC Thesaurus Topics

  • Aluminum
  • Elimination
  • Engineering
  • Epitaxial Growth
  • Particles
  • Production
  • Production Engineering
  • Production Management Methods
  • Productivity
  • Specifications
  • Substrates
  • Transistors

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