DETERMINATION OF TRANSISTOR FIGURE-OF-MERIT FOR RADIATION EFFECTS.

Abstract

Transient radiation effects on current gain (h sub FE) collector leakage current (I sub CBO) and saturation voltage (V sub SAT) were studied with both linear accelerator and pulsed reactor irradiations. The latter was also used for permanent damage studies. Transient radiation effects are found to relate to effects on (I sub CBO). Germanium mesa types show the least permanent degradation to (h sub FE) and (V sub SAT), but the silicon planar types show no (I sub CBO) degration. The silicon planar types are the least susceptible to transient effects. (h sub FE) is shown not to degrade transientwise as long as the operating point is maintained constant. Figures-of-merit are defined. (Author)

Document Details

Document Type
Technical Report
Publication Date
Sep 07, 1963
Accession Number
AD0430132

Entities

People

  • C. W. Perkins
  • G. D. Thomas

Organizations

  • Hughes Aircraft Company

Tags

DTIC Thesaurus Topics

  • Accumulators
  • Degradation
  • Determinants (Mathematics)
  • Figure Of Merit
  • Germanium
  • Linear Accelerators
  • Radiation
  • Radiation Effects
  • Saturation
  • Transistors

Fields of Study

  • Physics

Readers

  • Pulsed Power and Plasma Physics.
  • Semiconductor Device Technology