INJECTION LASER STUDY.
Abstract
A bistable device, whose two stable states are a lasing state and a state with only spontaneous emission, both for the same current through one of two separated contracts to the p-type side of a p-n junction, was shown to be feasible. Calculations for several models of absorption and emission spectra show the device to be bistable when the area of the low-current contact is greater than the area of the high-current contact. An approximate method for determining the far-field emission pattern perpendicular to the junction plane for the lasing modes has been found. Lasing has been seen for the first time in double-diffused Mn- and Zn-doped GaAs diodes, whose negative resistance was reported previously. The threshold densities at 77 K were 5000A/cm sq and higher. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 30, 1963
- Accession Number
- AD0430696
Entities
People
- Frederick Stern
- G. J. Lasher
- K. Weiser
Organizations
- IBM Thomas J. Watson Research Center