DIFFUSION AND SOLUBILITY OF IMPURITY ELEMENTS IN COMPOUND SEMICONDUCTORS.
Abstract
The diffusion of some impurity elements into III - V compounds is anomalous in that the diffusion coefficient is strongly concentration dependent. Careful measurements were made on the diffusion of Zn into both GaAs and GaP. A careful analysis of these results leads to the conclusion that diffusion occurs by an interstitial-substitutional mechanism, with the interstitial mode being dominant in the over-all process. The solubilities and distribution coefficients of Zn in these two semiconductors have been calculated as functions of temperature up to the melting point of the solvents. A sharp increase in the distribution coefficient near the melting point is accounted for by considering the transfer of neutral Zn from the liquid to the solid, where some Zn atoms become ionized acceptors. The relation between solid solubility and Zn vapor pressure at a fixed temperature has been investigated and theoretical calculations give results in good agreement with the experimental data. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1963
- Accession Number
- AD0430994
Entities
People
- G. L. Pearson
Organizations
- Stanford University