OXIDE SEMICONDUCTOR MATERIALS AND DEVICE RESEARCH.
Abstract
During the preparation of semiconducting ceramic rutile samples for precise determination of bulk and contact resistance values, a short-term variation in the total sample resistance was observed. Attempts were made to determine the extent of reduction that occurs in ceramic rutile when it is heated in a vacuum. Representative samples of ceramic rutile of the type used in preparation of rectifying diodes were subjected to neutron activation analysis. Of the sixtynine elements which can be detected in this fashion, only As and V were observed besides the major constituent of Ti. Experiments were initiated to determine the feasibility of growing single crystals of rutile from highly purified TiO2. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 17, 1963
- Accession Number
- AD0431268
Entities
People
- B. M. Warmkessel
- C. J. Kevane
- F. L. English
- H. B. Whitehurst
- J. J. Morrison
Organizations
- Arizona State University