DEVELOPMENT OF EPITAXIAL TECHNOLOGY FOR MICROELECTRONICS AND LARGE AREA DEVICE APPLICATION
Abstract
The study of epitaxial layer thickness and resistivity for integrated circuit N/P material was completed. Work on epitaxial layer perfection was continued and the importance of the substrate perfection and surface cleaning established. The feasibility of three point probe and junction capacitance techniques on a stepetched sample for the determination of layer doping profile was investigated. Experiments on in situ CO2 - SiCl4 oxide growth immediately after epitaxial deposition were started. Epitaxial deposition on peripheral oxide-masked substrates was investigated. The Sylvania doublebevel technique was successfully used to determine doping profiles in N+ prediffused N/P planar circuit structures. Work on vapor phase deposition of thin silicon films on non-silicon dielectric substrates was continued.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1961
- Accession Number
- AD0431993
Entities
People
- B. Seliksen
- J. Defandorf
- Pingshan Wang
- R. Berkstresser
- V. Sils
Organizations
- Sylvania Electric Products