RESEARCH ON SEMICONDUCTOR TRANSPORT.

Abstract

Transmitted phonon drag is used to study different scattering phenomena in silicon. The mean free path of the relevant thermal phonons is measured at 4.2 K in diffused npn silicon structures. At this temperature the mean free path is found to be 5000 = 1000 microns. A comparison is made between values obtained from crucible grown and epitaxial silicon. Both crystal materials with equivalent doping levels yield the same free path at 77 K. The transmitted phonon drag is proposed as a tool to study acoustic amplification of relevant thermal phonons in silicon at 77 K. These phonons have a frequency of 10 to the 12th power cps. It is shown that such high frequency phonons can interact very strongly with charge carriers via the deformation type coupling present in silicon. The fabrication of diffused 5 layer npn-pn silicon structures suitable for the amplification experiments is described. (Author)

Document Details

Document Type
Technical Report
Publication Date
Feb 01, 1964
Accession Number
AD0432700

Entities

People

  • K. Hubner
  • Reinhard K. Gereth

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Amplification
  • Charge Carriers
  • Compound Semiconductors
  • Couplings
  • Crucibles
  • Electronics
  • Fabrication
  • Frequency
  • Materials
  • Mean Free Path
  • Scattering
  • Semiconductors
  • Solid State Electronics
  • Transport Ships

Fields of Study

  • Materials science

Readers

  • Electrical Engineering
  • Materials Science and Engineering.

Technology Areas

  • Microelectronics