RADIATION DAMAGE IN SEMICONDUCTORS.
Abstract
This report describes a study of radiation enhanced diffusion in silicon. The same enhancement of diffusion as with protons is observed in electron-irradiated silicon. This conforms the point-defect mechanism proposed earlier. The proton-irradiated samples have been observed by X-ray microtopography and show a pattern of strains due to smallscale defects, but no new extended dislocations. Low temperature irradiation of Germanium is described. Stored energy measurements after a 14 K electron irradiation have been attempted, but the effect is masked by thermal phenomena accompanying the adsorption of residual gases in the calorimeter chamber. Radiation-induced defects in Silicon can drift in the electric field of a p-n junction, as in Germanium. At 288 K, there is drifting of defects with different charges, the acceptortype (negatively charged) being the slower. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 23, 1963
- Accession Number
- AD0433042
Entities
People
- P. Baruch
Organizations
- École Normale Supérieure