VAPOR PHASE GROWTH OF SINGLE CRYSTALS.

Abstract

A chemical vapor deposition process was developed for epitaxial growth of sapphire single crystals. Apparatus was designed and c6nstructed for use in the crystal growth process. Oriented crystals weighing up to five grams were grown at temperatures considerably below the melting point. The rate of growth for constant gas compositions and flow rates was found to increase with an increase in temperature. pp Etch pit studies showed an average dislocation density of 100 dislocations sq cm. Spectrochemical analyses incicated total impurity levels below 40 ppm. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1964
Accession Number
AD0433232

Entities

People

  • Philip S. Schaffer

Tags

Communities of Interest

  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Chemical Vapor Deposition
  • Crystal Growth
  • Crystals
  • Dislocations
  • Epitaxial Growth
  • Flow Rate
  • Melting Point
  • Single Crystals
  • Transition Temperature
  • Vapor Deposition
  • Vapor Phases

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Mechanical Engineering/Mechanics of Materials.
  • Semiconductor Device Technology