INVESTIGATION OF TRANSIENT RADIATION DAMAGE IN SEMICONDUCTOR MATERIALS.

Abstract

A high-frequency technique was developed for the measurement of bulk carrier lifetime in silicon samples. The use of contacts was eliminated. The technique is based on the measurement of the Q-value of a tank circuit which contains the sample. A single tube (6J6) is used to generate the oscillations and to measure transient changes of the Q-value. (Author)

Document Details

Document Type
Technical Report
Publication Date
Oct 31, 1963
Accession Number
AD0433623

Entities

People

  • Roland M. Lichtenstein

Organizations

  • Rensselaer Polytechnic Institute

Tags

DTIC Thesaurus Topics

  • Circuits
  • Compound Semiconductors
  • Electronics
  • Frequency
  • Lc Circuits
  • Materials
  • Measurement
  • Oscillation
  • Radiation
  • Semiconductors
  • Solid State Electronics

Readers

  • Electrical Engineering
  • Microwave Engineering.

Technology Areas

  • Microelectronics